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APTGT100DA120T1G
Boost chopper Fast Trench + Field Stop IGBT(R) Power Module
5 6 11
VCES = 1200V IC = 100A* @ Tc = 80C
Application * * * AC and DC motor control Switched Mode Power Supplies Power Factor Correction
CR1
Q2 CR2 9 10 1 2
3 4
Features
NTC
*
12
* * * Benefits * * * * * *
Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Internal thermistor for temperature monitoring High level of integration
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 140 * 100 * 200 20 480 200A @ 1100V Unit V
August, 2007 1-5 APTGT100DA120T1G - Rev 0
A V W
Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT100DA120T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 100A Tj = 125C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit A V V nA
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 100A RG = 3.9 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 100A RG = 3.9 VGE = 15V Tj = 125C VBus = 600V IC = 100A Tj = 125C RG = 3.9 Min Typ 7200 400 300 260 30 420 70 290 50 520 90 10 mJ 10 Max Unit pF
ns
ns
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 100A VR = 600V IF = 100A VGE = 0V Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 250 500 100 1.6 1.6 170 280 9 18 5 9 2.1 Unit V A A V ns C mJ
August, 2007 2-5 APTGT100DA120T1G - Rev 0
di/dt =2000A/s
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APTGT100DA120T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.26 0.48 150 125 100 4.7 80 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 - T25 T
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-5
APTGT100DA120T1G - Rev 0
August, 2007
APTGT100DA120T1G
Typical Performance Curve
200 Output Characteristics (VGE=15V) Output Characteristics 200 TJ = 125C
TJ=125C
150 IC (A)
TJ=25C
150 IC (A)
VGE=17V
VGE=13V VGE=15V
100
100
VGE=9V
50
50
0 0 1 2 VCE (V) 3 4
0 0 1 2 VCE (V) 3 4
200 175 150 125 IC (A) 100 75 50 25 0 5
Transfert Characteristics
TJ=25C TJ=125C
25 20 E (mJ) 15 10 5 0
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 3.9 TJ = 125C Eon Eoff Er Eon
TJ=125C
6
7
8
9
10
11
12
0
25
50
75
100 125 150 175 200 IC (A)
VGE (V) Switching Energy Losses vs Gate Resistance 25 20 E (mJ) 15 10 5 0 0 5 10 15 20 Gate Resistance (ohms) 25
VCE = 600V VGE =15V IC = 100A TJ = 125C
Eon
Reverse Bias Safe Operating Area 240 200 160
Eoff Er
IC (A)
120 80 40 0 0 300 600 900 VCE (V) 1200 1500
VGE=15V TJ=125C RG=3.9
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W) 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
IGBT
0.2 0.15 0.1 0.05
0 0.00001
rectangular Pulse Duration (Seconds)
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4-5
APTGT100DA120T1G - Rev 0
August, 2007
0.25
APTGT100DA120T1G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40
ZCS ZVS VCE=600V D=50% RG=3.9 TJ=125C Tc=75C
Forward Characteristic of diode 200
TJ=25C
150 IF (A)
30 20
100
TJ=125C
50 10 0 0 20 40 60 80 100 120 140 IC (A)
Hard switching
TJ=125C
0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.9 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
Diode
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT100DA120T1G - Rev 0
August, 2007

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